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| Mfg Part Number: 2N4302 | NSN : 5961-00-118-4773 | NIIN : 001184773 |
| CAGE Code : 07688 | Manufacturer: Joint Electron Device Engineering | Item Name : Transistor |
| FSC : 5961 Semiconductor Devices and Associated Hardware |
We at Integrated Purchasing are here to help you secure top quality Transistor parts like 2N4302. This particular NSN component is listed alongside the part number 2N4302, having been manufactured by Joint Electron Device Engineering. Reach out by filling out an RFQ for a timely quote and please let us know your desired quantity, price, and shipping time frame so we can make the purchasing process as efficient as possible to meet your specific needs. We have experts working around-the-clock and guarantee a response to your completed form within 15 minutes.
In addition to NSN 5961-00-118-4773, we offer a vast inventory of parts at competitive pricing. We understand the importance of fully informed purchasing and therefore list every item with all applicable information. For example, you can find NSN 5961-00-118-4773 and part number 2N4302 which are manufactured by Joint Electron Device Engineering under the CAGE Code 07688. Let us provide you with any information you require in a timely and detailed manner. We have experts working around-the-clock to answer any questions in addition to quotes. Do not hesitate to contact us and allow Integrated Purchasing to do the work for your sourcing, logistics, shipments, and quality so that you can focus on building. Call or email us today to get started!
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-118-4773 Item Description: Transistor | 5961 | 001184773 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2n4302 | 5 | 1 | C | A |
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | PLASTIC |
| ABHP | OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.210 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 20.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM GATE CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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