Mfg Part Number: 2SB1115 | NSN : 5961-01-463-0632 | NIIN : 014630632 |
CAGE Code : 0T1F7 | Manufacturer: Anritsu Company | Item Name : Transistor |
FSC : 5961 Semiconductor Devices and Associated Hardware |
We at Integrated Purchasing are here to help you secure top quality Transistor parts like 2SB1115. This particular NSN component is listed alongside the part number 2SB1115, having been manufactured by Anritsu Company. Reach out by filling out an RFQ for a timely quote and please let us know your desired quantity, price, and shipping time frame so we can make the purchasing process as efficient as possible to meet your specific needs. We have experts working around-the-clock and guarantee a response to your completed form within 15 minutes.
In addition to NSN 5961-01-463-0632, we offer a vast inventory of parts at competitive pricing. We understand the importance of fully informed purchasing and therefore list every item with all applicable information. For example, you can find NSN 5961-01-463-0632 and part number 2SB1115 which are manufactured by Anritsu Company under the CAGE Code 0T1F7. Let us provide you with any information you require in a timely and detailed manner. We have experts working around-the-clock to answer any questions in addition to quotes. Do not hesitate to contact us and allow Integrated Purchasing to do the work for your sourcing, logistics, shipments, and quality so that you can focus on building. Call or email us today to get started!
NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5961-01-463-0632 Item Description: Transistor | 5961 | 014630632 | 0 | N | B | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
U | B | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
2sb1115 | 5 | 2 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 4.000 MILLIMETERS MAXIMUM |
AGAV | END ITEM IDENTIFICATION | 6625014252551E/IFSCM33297 |
AKPV | MOUNTING FACILITY QUANTITY | 3 |
AXGY | MOUNTING METHOD | TERMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON ALLOY |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -50.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND -6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | -100.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT ABSOLUTE AND -100.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT MAJOR |
CTRD | POWER RATING PER CHARACTERISTIC | 2.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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